Bas16j 115 что означает 115

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Bas16j 115 что означает 115

Table 1. Product overview Package NXP SOD323 SOD523 JEITA SC-76 SC-79 JEDEC TO-236AB single triple isolated triple isolated single Configuration Package configuration small and flat lead very small and flat lead leadless ultra small ultra small ultra small and flat lead very small very small very small ultra small and flat lead

I High switching speed: trr ns I Low leakage current I Repetitive peak reverse voltage: VRRM V I Low capacitance I Reverse voltage: V I Small SMD plastic packages

Quick reference data Parameter reverse voltage reverse current reverse recovery time 80 V
Table 3. Pin 2 3 Pinning Description anode not connected cathode

BAS16VV; BAS16VY anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1)

Table 4. Ordering information Package Name SC-76 SC-79 Description plastic surface-mounted package; 3 leads plastic surface-mounted package; 2 leads plastic surface-mounted package; 2 leads leadless ultra small plastic package; 2 terminals; body mm plastic surface-mounted package; 3 leads plastic surface-mounted package; 6 leads plastic surface-mounted package; 6 leads plastic surface-mounted package; 3 leads plastic surface-mounted package; 2 leads plastic surface-mounted package; 2 leads Version SOD323 SOD523 Type number

* = made in Hong Kong = p: made in Hong Kong = t: made in Malaysia = W: made in China

YL1070 : Double Tetrodes

2222581598 : Surface-mount Ceramic Multilayer Capacitors

2222580497 : Surface-mount Ceramic Multilayer Capacitors

P87C51FC-4A,512 : Embedded — Microcontroller Integrated Circuit (ics) Internal Tube 2.7 V

5.5 V; IC 80C51 MCU 256 ROMLESS 44PLCC Specifications: Program Memory Size: 32KB (32K x 8) ; RAM Size: 256 x 8 ; Number of I /O: 32 ; Package / Case: 44-LCC (J-Lead) ; Speed: 16MHz ; Oscillator Type: Internal ; Packaging: Tube ; Program Memory Type: OTP ; EEPROM Size: — ; Core Processor: 8051 ; Data Converters: — ; Core Size: 8-Bit ; Ope

NX1117CE25Z,115 : Pmic — Voltage Regulator — Linear (ldo) Integrated Circuit (ics); IC REG LDO 1A 2.5V SOT-223 Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

BLF6G22LS-100,118 : S BAND, Si, N-CHANNEL, RF POWER, MOSFET Specifications: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: SOT-539A, 5 PIN ; Number of units in IC: 1

LPC11U24FHN33 : RISC MICROCONTROLLER Specifications: Life Cycle Stage: ACTIVE

UBA2071ATS : HALF BRIDGE BASED PRPHL DRVR, PDSO24 Specifications: Device Type: Line / Bus Driver ; Supply Voltage: Other, 12 ; Operating Temperature: -25 to 100 C (-13 to 212 F) ; Package Type: SOP, 7.50 MM, PLASTIC, MS-013, SOT137-1, SOP-24 ; Pins: 24

VT16652ADGG : LVT SERIES, DUAL 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56 Specifications: Technology: BICMOS ; Device Type: Transceiver ; Supply Voltage: 3.3V ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Pins: 56

933388250215 : 13.25 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Specifications: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS

933505280215 : 0.2 A, 250 V, SILICON, SIGNAL DIODE Specifications: Package: PLASTIC, SMD, 3 PIN ; Number of Diodes: 1 ; IF: 200 mA ; RoHS Compliant: RoHS

DFN1010 : Low RDSon MOSFETs in ultra-small DFN1010 single and dual package P- and N-channel enhancement mode Field-Effect Transistor (FET) in leadless ultra-small DFN1010D-3 (SOT1215) and DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages using Trench MOSFET technology. Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.

VS-90MT160KPBF : BRIDGE RECT MOD 3PH 90A 1.6KV SCREW. s: No. of Phases: Three ; Repetitive Reverse Voltage Vrrm Max: 1.6kV ; Forward Current If(AV): 90A ; Forward Voltage VF Max: 1.65V ; Power Dissipation Pd: — ; Diode Mounting Type: Panel ; Operating Temperature Range: -40�C to +150�C ; Bridge Rectifier Case Style: Module ; No. of Pins: 6.

BYV32EB-200,118 : ULTRAFAST DIODE, DUAL COMMON CATHODE, 1.15V, D2PAK. s: No. of Phases: — ; Diode Type: Soft Recovery ; Repetitive Reverse Voltage Vrrm Max: 200V ; Forward Current If(AV): 20A ; Diode Configuration: Dual Common Cathode ; Forward Voltage VF Max: 1.15V ; Module Configuration: — ; Reverse Recovery Time trr Max: 25ns ; Forward Surge Current Ifsm Max: 137A.

VS-HFA08TA60CPBF : FAST RECTIFER, CMN CTHD, 4A, TO-220AB. s: No. of Phases: — ; Diode Type: Fast Recovery ; Repetitive Reverse Voltage Vrrm Max: 600V ; Forward Current If(AV): 4A ; Diode Configuration: Dual Common Cathode ; Forward Voltage VF Max: 2.2V ; Module Configuration: — ; Reverse Recovery Time trr Max: 42ns ; Forward Surge Current Ifsm Max: 25A ; Operating Temperature.

1N1184R : STANDARD RECOVERY, 100V, 35A, DO-5. s: Diode Type: Standard Recovery ; Repetitive Reverse Voltage Vrrm Max: 100V ; Forward Current If(AV): 35A ; Forward Voltage VF Max: 1.2V ; Reverse Recovery Time trr Max: — ; Forward Surge Current Ifsm Max: 595A ; Operating Temperature Range: -65�C to +190�C ; Diode Case Style: DO-5 ; No. of Pins: — ; MSL: -.

C3D10170H : DIODE, SIC SCHOTTKY, 10A, 1700V, TO-247-2. s: Diode Type: SiC Schottky ; Repetitive Reverse Voltage Vrrm Max: 1.7kV ; Forward Current If(AV): 10A ; Forward Voltage VF Max: 2V ; Reverse Recovery Time trr Max: — ; Forward Surge Current Ifsm Max: 55A ; Operating Temperature Range: -55�C to +175�C ; Diode Case Style: TO-247 ; No. of Pins: 2 ; MSL: -.

BAS40-04-V-GS08 : SMALL SIGNAL DIODE, 40V, SOT-23. s: Diode Type: Ultrafast Recovery ; Forward Current If(AV): — ; Repetitive Reverse Voltage Vrrm Max: 40V ; Forward Voltage VF Max: 1V ; Reverse Recovery Time trr Max: 5ns ; Forward Surge Current Ifsm Max: 600mA ; Operating Temperature Range: — ; Diode Case Style: SOT-23 ; No. of Pins: 3 ; MSL: -.

PMBFJ109,215 : RF JFET, N CH, 25V, 40MA, 3-SOT-23. s: Transistor Type: RF JFET ; Drain Source Voltage Vds: 25V ; Continuous Drain Current Id: 40mA ; Power Dissipation Pd: 250mW ; Operating Frequency Range: — ; Noise Figure Typ: — ; Operating Temperature Range: — ; RF Transistor Case: SOT-23 ; No. of Pins: 3 ; MSL: -.

FSBB15CH60C : 6-PACK IGBT, MODULE, 15A, 600V 3 PH. s: Module Configuration: Six ; Transistor Polarity: N Channel ; DC Collector Current: 15A ; Collector Emitter Voltage Vces: 2V ; Power Dissipation Pd: 55W ; Collector Emitter Voltage V(br)ceo: 600V ; Operating Temperature Range: -40�C to +150�C ; Transistor Case Style: SPM27-CC ; No. of Pins: 27.

FGH20N60UFDTU : IGBT,N CH,FAST,W/DIO,600V,40A,TO247. s: Transistor Type: IGBT ; DC Collector Current: 40A ; Collector Emitter Voltage Vces: 600V ; Power Dissipation Pd: 165W ; Collector Emitter Voltage V(br)ceo: 600V ; Operating Temperature Range: -55�C to +150�C ; Transistor Case Style: TO-247AB ; No. of Pins: 3 ; MSL: -.

VS-GT100LA120UX : TRANSISTOR,IGBT,1200V,100A,SOT227. s: Transistor Type: IGBT ; DC Collector Current: 134A ; Collector Emitter Voltage Vces: 2.36V ; Power Dissipation Pd: 463W ; Collector Emitter Voltage V(br)ceo: 1.2kV ; Operating Temperature Range: -40�C to +150�C ; Transistor Case Style: SOT-227 ; No. of Pins: 4 ; MSL: -.

SI1551DL-T1-E3 : DUAL N/P CHANNEL MOSFET, 20V, SC-70. s: Transistor Polarity: N and P Channel ; Continuous Drain Current Id, N Channel: 290mA ; Continuous Drain Current Id, P Channel: -410mA ; Drain Source Voltage Vds, N Channel: 20V ; Drain Source Voltage Vds, P Channel: -20V ; On Resistance Rds(on), N Channel: 1.55ohm ; On Resistance Rds(on), P Channel: 0.85ohm ; Rds(on).

AUIRLR3636 : N CH MOSFET, AUTOMOTIVE, 60V, 50A, TO-252. s: Transistor Polarity: N Channel ; Continuous Drain Current Id: 50A ; Drain Source Voltage Vds: 60V ; On Resistance Rds(on): 0.0054ohm ; Rds(on) Test Voltage Vgs: 10V ; Threshold Voltage Vgs Typ: — ; Power Dissipation Pd: 143W ; Operating Temperature Range: -55�C to +175�C ; Transistor Case Style: TO-252 ; No. of Pins:.

BSP126,135 : N CH MOSFET, 250V, 375MA, SOT-223. s: Transistor Polarity: N Channel ; Continuous Drain Current Id: 375mA ; Drain Source Voltage Vds: 250V ; On Resistance Rds(on): 2.8ohm ; Rds(on) Test Voltage Vgs: 10V ; Threshold Voltage Vgs Typ: 2V ; Power Dissipation Pd: 1.5W ; Operating Temperature Range: — ; Transistor Case Style: SOT-223 ; No. of Pins: 3 ; MSL:.

BT148W-600R,115 : THYRISTOR. s: Peak Repetitive Off-State Voltage, Vdrm: 600V ; Gate Trigger Current Max, Igt: 200�A ; Current It av: 600mA ; On State RMS Current IT(rms): 1A ; Peak Non Rep Surge Current Itsm 50Hz: 11A ; Holding Current Max Ih: 6mA ; Gate Trigger Voltage Max Vgt: 1.5V ; Operating Temperature Range: — ; Thyristor Case: SOT-223 ; No. of Pins: 3 ; MSL:.

BC846ALT1G : BIPOLAR TRANSISTOR, NPN, 65V SOT-23. s: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 65V ; Transition Frequency Typ ft: 100MHz ; DC Collector Current: 100mA ; Power Dissipation Pd: 300mW ; DC Current Gain hFE: 100 ; Operating Temperature Range: -55�C to +150�C ; Transistor Case Style: SOT-23 ; No. of Pins: 3 ; MSL: -.

NSBA144EF3T5G : BRT TRANSISTOR, 50V, 47K/47KOHM, SOT1123. s: Collector Emitter Voltage V(br)ceo: 50V ; Continuous Collector Current Ic: 100mA ; Base Input Resistor R1: 47kohm ; Base-Emitter Resistor R2: 47kohm ; Resistor Ratio, R1 / R2: 1 ; RF Transistor Case: SOT-1123 ; No. of Pins: 3.

Datasheet BAS16J — NXP Даташит Диод, переключатель, 75 В, 0.25 А, SOD323F — Даташит

Купить BAS16J на РадиоЛоцман.Цены — от 0.54 до 9.75 ₽

Подробное описание

Производитель: NXP

Описание: Диод, переключатель, 75 В, 0.25 А, SOD323F

Краткое содержание документа:
BAS16 series
High-speed switching diodes
Rev.

05 — 25 August 2008 Product data sheet
1. Product profile
1.1 General description

BAS16J,115 NXP Semiconductors, BAS16J,115 Datasheet

BAS16 series High-speed switching diodes Rev. 05 — 25 August 2008 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Type number BAS16 BAS16H BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W .

Page 2

. NXP Semiconductors 1.4 Quick reference data Table 2. Symbol Per diode [1] When switched from I 2. Pinning information Table 3. Pin BAS16; BAS16T; BAS16W BAS16H; BAS16J; BAS316; BAS516 1 2 BAS16L 1 2 BAS16VV; BAS16VY [1] The marking bar indicates the cathode. BAS16_SER_5 Product data sheet Quick reference data .

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. NXP Semiconductors 3. Ordering information Table 4. Type number BAS16 BAS16H BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS316 BAS516 4. Marking Table 5. Type number BAS16 BAS16H BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS316 BAS516 [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China .

Page 4

. NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode V RRM FRM I FSM P tot BAS16_SER_5 Product data sheet Limiting values Parameter Conditions repetitive peak reverse voltage reverse voltage forward current BAS16 BAS16H BAS16L .

Page 5

. NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 m copper strip line. .

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. NXP Semiconductors Table 7. Symbol R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 m copper strip line. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm [5] Single diode loaded .

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. NXP Semiconductors (mA (1) (2) (3) ( 0.2 0.4 0.6 0.8 ( 150 C amb ( amb ( amb ( amb Fig 1. Forward current as a function of forward voltage; typical values ( ( ( ( ( 150 C amb ( amb ( amb ( amb Fig 3. Reverse current as a function of reverse voltage; typical values BAS16_SER_5 Product data sheet 006aab132 .

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. NXP Semiconductors 8. Test information D.U. ( Input signal: reverse pulse rise time t Oscilloscope: rise time Fig 5. Reverse recovery time test circuit and waveforms 450 D.U.T. Input signal: forward pulse rise time t Fig 6. Forward recovery voltage test circuit and waveforms 9. Package outline 3 .

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. NXP Semiconductors 1.35 1.15 1 2.7 1.8 2.3 1.6 2 0.40 0.25 Dimensions in mm Fig 9. Package outline BAS16J (SOD323F/SC-90) 1.8 1.4 3 1.75 0.9 1.45 0 Dimensions in mm Fig 11. Package outline BAS16T (SOT416/SC-75) 2.2 1 2.2 1.35 2.0 1.15 pin 1 index 1 2 0.65 1.3 Dimensions in mm Fig 13 .

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. NXP Semiconductors 1.35 1.15 1 2.7 1.8 2.3 1.6 2 0.40 0.25 Dimensions in mm Fig 15. Package outline BAS316 (SOD323/SC-76) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package BAS16 SOT23 BAS16H SOD123F .

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. NXP Semiconductors 11. Soldering 3 1.7 Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB) 4.6 2.6 Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB) BAS16_SER_5 Product data sheet 3.3 2.9 1 2 1.4 2.8 4.5 Rev. 05 — 25 August 2008 BAS16 series High-speed switching diodes .

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. NXP Semiconductors Fig 19. Reflow soldering footprint BAS16H (SOD123F) 1.65 Fig 20. Reflow soldering footprint BAS16J (SOD323F) BAS16_SER_5 Product data sheet 4.4 4 2.9 1.6 2.1 1.6 1 Reflow soldering is the only recommended soldering method. Dimensions in mm 3.05 2.2 2.1 0.95 0 .

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. NXP Semiconductors 0.9 Fig 21. Reflow soldering footprint BAS16L (SOD882) Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75) BAS16_SER_5 Product data sheet 1.3 0 Reflow soldering is the only recommended soldering method. 2.2 1.7 0.85 0 1.3 Rev. 05 — 25 August 2008 BAS16 series High-speed switching diodes R0 .

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. NXP Semiconductors 2 1.7 Fig 23. Reflow soldering footprint BAS16VV (SOT666) Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88) BAS16_SER_5 Product data sheet 2.75 2.45 2.1 1.6 0.538 0.55 1.075 (2 ) 1 Reflow soldering is the only recommended soldering method. 2.65 2.35 1.5 0.6 .

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. NXP Semiconductors 4.5 Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88) Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70) BAS16_SER_5 Product data sheet 1.3 1.3 2.45 5.3 2.65 1.85 1.325 2 0 Rev. 05 — 25 August 2008 BAS16 series High-speed switching diodes 1.5 0.3 2.5 1 .

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. NXP Semiconductors 3.65 2.1 Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70) 1.65 Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76) BAS16_SER_5 Product data sheet 4.6 2.575 1.425 (3 ) 3.05 2.1 0.95 2 Rev. 05 — 25 August 2008 BAS16 series High-speed switching diodes 1.8 Dimensions in mm .

Page 17

. NXP Semiconductors 2.75 Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76) Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79) BAS16_SER_5 Product data sheet 5 2 2.15 1.1 1 Reflow soldering is the only recommended soldering method. Rev. 05 — 25 August 2008 BAS16 series High-speed switching diodes .

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. Release date BAS16_SER_5 20080825 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table 5 “Marking • Table 6 “Limiting V &#x2022 .

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. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice .

Page 20

. NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history .

BAS16J аналог BAS16J,115 и BAS16J,115

The BAS16 series high-speed Switching Diode encapsulated in a small surface-mounted device (SMD) plastic package. It is used for general purpose switching. . Low capacitance . Low leakage current . * AEC-Q101 qualified

BAS16J,115 Обзор

The BAS16J is a high-speed Switching Diode features low capacitance and low leakage current. . 1.5pF Capacitance

BAS16J Аналоги

образ модель Производители Название продукта Тип описание PDF сравнить BAS16J,115

BAS16J отечественный анало BAS16J,115, BAS16J,115: BAS16J SOD, BAS16J,115 SOD, BAS16J,115. BAS16J характеристики и его российские аналоги BAS16J,115, BAS16J,115: BAS16J Diode Switching 100V 0.25A Automotive 2Pin SOD-323F, BAS16J,115 NXP BAS16J,115 Small Signal Diode, Single, 100V, 250mA, 1.25V, 4ns, 4A, BAS16J,115 DIODE GEN PURP 100V 250mA SOD323. BAS16J аналоги BAS16J,115, BAS16J,115 Корпус/Пакет: BAS16J Diode Switching 100V 0.25A Automotive 2Pin SOD-323F, BAS16J,115 NXP BAS16J,115 Small Signal Diode, Single, 100V, 250mA, 1.25V, 4ns, 4A, BAS16J,115 DIODE GEN PURP 100V 250mA SOD323.