Otp memory что это

21.4. Дополнительные памяти OTP и EEPROM

Более современные и мощные микроконтроллеры STM32 предоставляют однократно программируемую (One-Time Programmable, OTP) память. Это специальная память размером от 512 до 1024 Байт с уникальной характеристикой: когда бит этой памяти устанавливается из 1 в 0, его уже невозможно восстановить до 1. Это означает, что данная область является не стираемой. Такая область памяти особенно полезна для хранения соответствующих параметров конфигурации, связанных с конкретным устройством, таких как серийные номера, MAC-адрес, значения калибровки и так далее. Распространённая практика в электронной промышленности состоит в том, чтобы производить устройства с различными возможностями, начиная с одной и той же печатной платы или даже с одной и той же законченной платы. Данная область может также использоваться для хранения параметров конфигурации, используемых микропрограммой для адаптации возможностей платы.

Область OTP разделена на N блоков данных OTP размером 32 Байт и один блок блокировки OTP (Lock block) из N Байт. Блоки данных и блокировки не могут быть стерты. Блок блокировки содержит N Байт LOCKBi (0 ≤ i ≤ N-1) для блокировки соответствующего блока данных OTP (блока от 0 до N). Каждый блок данных OTP может быть запрограммирован до тех пор, пока не будет запрограммировано значение 0x00 в соответствующем байте блокировки OTP (очевидно, отдельный бит, уже установленный в 0, не может быть восстановлен в 1). Байты блокировки должны содержать только значения 0x00 и 0xFF, в противном случае байты OTP могут учитываться неправильно.

Таблица 5: Организация памяти OTP в микроконтроллере STM32F401RE

В таблице 5 показана организация памяти OTP в микроконтроллере STM32F401RE, и она взята из соответствующего справочного руководства. Как видите, данный микроконтроллер предоставляет 16 блоков данных OTP общим объемом 512 Байт. Шестнадцать байтов блокировки позволяют заблокировать соответствующие блоки данных

Другой распространенной практикой в цифровой электронике является использование выделенной и часто внешней памяти EEPROM для хранения параметров конфигурации. Память EEPROM имеет несколько преимуществ по сравнению с Flash-памятью:

• Каждый ее блок можно стирать по отдельности.

• Каждый блок можно стирать до 1000000 и более раз (Flash-память ограничена 100000 циклами стирания).

• Номинальный срок службы обычно выше, чем у Flash-памяти.

• Они обычно дешевле, чем Flash-памяти (NOR и NAND).

• Существуют памяти EEPROM, способные работать при температурах до 200°C.

Однако главный недостаток памятей EEPROM заключается в том, что они обычно намного медленнее Flash-памяти и занимают дополнительное место на печатной плате.

Если ваша разработка направлена на снижение стоимости спецификации компонентов, то ST предоставляет несколько руководств по применению, в которых описывается, как эмулировать память EEPROM с помощью встроенной Flash-памяти STM32 (название этого руководства по применению “EEPROM emulation in STM32Fxx microcontrollers” (Эму-

ляция EEPROM в микроконтроллерах STM32Fxx)). В конце концов, несколько микроконтроллеров серии STM32L предоставляют интегрированную EEPROM. Для получения дополнительной информации обратитесь к техническому описанию вашего микроконтроллера.

Which is one time programmable memory?

OTP (one time programmable) memory is a special type of non-volatile memory (NVM) that permits data to be written to memory only once. Once the memory has been programmed, it retains its value upon loss of power (i.e., is non-volatile).

Which are the one time programmable devices?

High Definition Television.
Gate Array.
Thermal Sensor.
Field Programmable Gate Arrays.
Application Specific Integrated Circuit.
Erasable Programmable Read-Only Memory.
Programmable Logic Device.
Programmable Read Only Memory.

Is OTP a ROM?

OTPs are typi- cally programmed by the customer. . ROM (Read Only Memory): ROM devices are programmed at the fabrication step using a spe- cial mask containing the customer code. Therefore, the code can’t be modified after that step.

What is the difference between eFuse and OTP?

One-time programmable (OTP) memory is a type of non-volatile memory (NVM) that commonly comprises of electrical fuse (eFuse) and antifuse. . In contrast, an eFuse is programmed by electrically blowing a strip of metal or poly with a flow of high-density current using I/O voltage.

What is OTP IC?

OTP stands for “One-Time Programmable”, a device that can only be programmed once to permanently store any kind of information (data for chip IDs, security keys, product feature selection, memory redundancy, device trimming, or MCU code memory).

How to Choose an Embedded OTP

23 related questions found

What is OTP in memory?

OTP (one time programmable) memory is a special type of non-volatile memory (NVM) that permits data to be written to memory only once. Once the memory has been programmed, it retains its value upon loss of power (i.e., is non-volatile).

Can OTP be reprogrammed?

Once programmed, there is no way to reprogram (or erase the electrons from the floating gate) after the parts are (opaque) packaged (wafers can be UV erased and then reprogrammed). Thus, making it a true one time programmable (OTP) device.

What is eFuse memory?

In computing, an eFuse (electronic fuse) is a microscopic fuse put into a computer chip. This technology was invented by IBM to allow for the dynamic real-time reprogramming of chips. . By utilizing a set of eFuses, a chip manufacturer can allow for the circuits on a chip to change while it is in operation.

What is antifuse state its merits and demerits?

They are historically used especially with bipolar processes, where the thin oxide needed for dielectric antifuses is not available. Their disadvantage, however, is lower area efficiency compared to other types. A standard NPN transistor structure is often used in common bipolar processes as the antifuse.

What is antifuse in VLSI?

Browse Encyclopedia. A. A programmable chip technology that creates permanent, conductive paths between transistors. In contrast to «blowing fuses» in the fusible link method, which opens a circuit by breaking apart a conductive path, the antifuse method closes the circuit by «growing» a conductive via.

What is fuse in ROM?

The memory can be programmed just once after manufacturing by “blowing” the fuses (using a PROM blower), which is an irreversible process. . Blowing a fuse opens a connection while blowing an antifuse closes a connection.

What is OTP controller?

The OTP controller is a module that is a peripheral on the chip interconnect bus, and thus follows the Comportability Specification. The OTP is a module that provides a device with one-time-programming functionality. The result of this programming is non-volatile, and unlike flash, cannot be reversed.

What is OTP semiconductor?

It is a non-volatile memory and similar to PROM or Programmable Read Only Memory, One Time Programmable memory can only be programmed once. . Once it has been programmed or blown, it cannot be modified.

Which is the most basic non-volatile memory?

1. Which is the most basic non-volatile memory? Explanation: The basic non-volatile memory is ROM or mask ROM, and the content of ROM is fixed in the chip which is useful in firmware programs for booting up the system.

Is ROM programmable?

PROM or programmable ROM (programmable read-only memory) is a computer memory chip that can be programmed once after it is created. Once the PROM is programmed, the information written is permanent and cannot be erased or deleted. . An example of a PROM is a computer BIOS in early computers.

What type of memory is eeprom?

EEPROM (electrically erasable programmable read-only memory) is user-modifiable read-only memory (ROM) that allow users to erase and reprogram stored data repeatedly in an application. In contrast to EPROM chips, EEPROM memory does not need to be removed from the computer in order to modify the data.

How many types of PLD is?

How many types of PLD is? Explanation: There are two types of PLD, viz., devices with fixed architecture and devices with a flexible architecture. The main categories of PLDs are PROM, PAL and PLA.

What is the main advantage of antifuse FPGAs?

The advantages of antifuse FPGAs are that they are non-volatile and the delays due to routing are very small, so they tend to be faster.

What is FPGA design?

Field Programmable Gate Arrays (FPGAs) are integrated circuits often sold off-the-shelf. . FPGAs contain configurable logic blocks (CLBs) and a set of programmable interconnects that allow the designer to connect blocks and configure them to perform everything from simple logic gates to complex functions.

What are eFUSEs used for?

An eFuse is an “active circuit protection device with an integrated FET used to limit currents, voltages to safe levels during fault conditions”. It embeds various functions to protect system against inrush current, overcurrent, overvoltage, reverse current, reverse polarity and short circuit faults.

Is eFuse real?

eFuse is an eSports media platform that aggregates various gaming sub-communities together as a greater ecosystem. The startup has three main goals: provide a clearinghouse for gaming organizations, grow a diverse, widespread community, and produce partnerships between different entities.

What is eFuse in ESP32?

Each eFuse is a one-bit field which can be programmed to 1 after which it cannot be reverted back to 0. . ESP32 has 4 eFuse blocks each of the size of 256 bits (not all bits are available): EFUSE_BLK0 is used entirely for system purposes; EFUSE_BLK1 is used for flash encrypt key.

Can you overwrite ROM?

Read only memory (ROM) is non-volatile primary storage. It keeps its contents when the computer is turned off. ROM can be read from but not written to. . These instructions and data are usually programmed by the computer’s manufacturer and cannot be overwritten.

Which is used as the fuse material in programmable ROM?

The fuse uses material like nichrome and polycrystalline. For blowing the fuse it is necessary to pass around 20 to 50 mA of current for period 5 to 20 vs. The blowing of fuses according to the truth table is called programming of ROM. The user can program PROMs with special PROMs programmer.

I-fuse OTP — The OTP of Choice

OTP stands for “One-Time Programmable”, a device that can only be programmed once to permanently store any kind of information (data for chip IDs, security keys, product feature selection, memory redundancy, device trimming, or MCU code memory). Every chip needs OTPs, as long as they are reliable, available, and affordable.

I-fuse™ technologies achieve 100x reliability, 1/100 cell size, and 1/10 program current of the ubiquitous e-fuse, by (a) using junction diode, instead of MOS as a program selector in an OTP cell, (b) setting program current below a catastrophic breaking point, and (c) using small cell to increase program efficiency to reduce program current. As a result, our I-fuse™ can guarantee 0% program defect and can have less than 0.01ppm pre-program defect. Our I-fuse™ also passed data retention at 300oC for 1,000 hours. Our OTP can be programmed in low and standard voltages and can be available and scalable from 0.5µm to 28/20/16nm CMOS.

Fig. 1 OTP Applications

Fig. 2 Three key technical features of I-fuse™

OTP Applications

OTP allows each chip to be customized after fabrication to fix defects, adjust parameters, trim statistical variations, store permanent data, or personalize configurations. OTP can be used in chip IDs, security keys, product features selection, memory redundancy, device trimming, parameter or configuration storage, and code memory for MCU, as shown in Fig. 1.

Every chip needs OTPs if they can be reliable, available, and affordable in any CMOS processes. However, today’s OTP technologies need cells customized for different CMOS derivatives (e.g. LP, G, GP, HS), variations (e.g. logic, Mixed Signal, HV, BCD, CIS) or optical shrinks (10% or 15% shrink) even for those in the same generations from the same foundries. Porting between process generations and foundries has been very difficult and requires a long development time.

I-Fuse™ OTP: The OTP of Choice

I-fuse™ is a fuse-based OTP technology that uses (a) 1R1T cell to reduce cell size to 1/100, (b) limited program current below a catastrophic break point to increase reliability by 100x, and (c) small cell size to increase program efficiency to achieve 1/10 program current, comparing with the popular electrical fuse (e-fuse). The three key technical features are shown in Fig. 2 and further discussed as follows:

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(1) 1R1D (P+/NW diode) vs. conventional 1R1T OTP cell

The I-fuse™ cell uses 1R1D (1 Resistor and 1 junction Diode), instead of 1R1T (1 Resistor and 1 Transistor) used in conventional e-fuse cells. Under the same voltage, a diode can deliver 5-6x more current in 1/5-1/6 of area compared with MOS. Therefore, the I-fuse™ has only 1/25-1/36 cell size of e-fuse cells from IDMs and 1/100 of those cells from foundries. The top view of an e-fuse and I-fuse™ cells are shown as in Fig. 3(a) and 3(b), respectively.

Fig. 3(a) Conventional 1R1T e-Fuse cell

Fig. 3(b) 1R1D I-Fuse cell (illustration only)

Fig. 3(c) Typical fuse I-V curve

(2) Program current below a catastrophic critical current, Icrit

A typical I-V characteristic of programming a fuse is shown in Fig. 3(c). When an applied voltage is high enough, the fuse can be heated up so that the fuse resistance is higher until a break point such that fuse suddenly breaks due to rupture, decomposition, or melt—which is the conventional way of programming a fuse.

On the contrary, programming of an I-fuse™ is to set current below Icrit to increase fuse resistance gradually without breaking the fuse. The I-fuse™ can be programmed in multiple shots until a satisfactory high resistance is reached. Program yield of an I-fuse™ is practically 100% such that the yield is determined by pre-programmed fab defects. In the past 3 years, we found only a few pre-program defects in more than 1 billion I-fuse™ accumulated from more than 30 silicon shuttles in 0.35um to 28nm CMOS. The I-fuse defect is less than 10-8, while an e-fuse defect is about 10-5 [1]. I-fuse™ achieves at least100x reliability over the conventional e-fuse.

(3) Small fuse and program selector

I-fuse™ cells are kept small to conserve heat so that temperature can be raised higher and faster to accelerate programming. Along with lowering the program current below Icrit, the I-fuse™ program current requires only 1/10 of a conventional e-fuse in the same CMOS technology, i.e. 7.5mA at 0.18µm for I-fuse™ and 18mA at 90nm for e-fuse after scaling width for current density comparision.

The I-fuse™ has been proven in silicon from 0.35µm to 28nm. The cell size and program current are scalable according to Moore’s law. I-fuse™ technologies can be continuously scaled to 16, 10nm and beyond.

OTP Merit Comparisons

Only a handful of OTP programming mechanisms are available, such as breaking fuse, breaking gate oxide, or storing charges, to create a permanent data state:

Fig. 4: OTP feature of merits

Table 1: feature comparison

(1) I-fuse™

I-fuse™ program mechanism is based on true electromigration (EM) that is the most reliable and most robust mechanism amongst all OTP technologies. I-fuse™ cell has only one fuse and one diode that is about half of an SRAM cell. The diode and fuse are two-terminal passive devices that are available and scalable in all CMOS technologies. The program voltages are very low that can meet the convenient I/O voltages of 1.8/2.5/3.3/5V for different CMOS generations. The temperature range is very wide from -50°C to 200°C, because the fuse does not suffer catastrophic damage during programming.

(2) Electrical fuse (e-fuse)

Electrical fuse with a 1R1T (1 Resistor and 1 Transistor) cell is the most popular OTP technology. However, the cell size is huge because of large MOS device. Programming an e-fuse is more like an explosion such that debris may micro-bridge to create shorts after prolong use or burn-in. The defect rate is about 10ppm (10 parts per million) [1].

(2) Logic EPROM (Electrical Programmable Read-Only Memory).

This OTP technology is based on storing charges in a floating gate to create “permanent” data state. However, the gate oxide must not be too thick for charge injection and too thin for data retention. The suitable gate oxide of 80Å happens for 0.35µm MOS devices, which means that 0.35µm or 0.5µm CMOS is the natural process for this OTP technology. Data retention limits the reliability to only 100ppm level and is sensitive to process variations.

(3) Gate-oxide breakdown Anti-fuse (AF)

AF is another OTP technology to create a “permanent” data state by breaking a gate oxide in a MOS device. Unfortunately, there is a “soft breakdown” mechanism associated such that broken oxide may appear to heal itself [2][3]. The thinner the gate oxide, the more severe the soft breakdown is. This OTP technology needs heavy redundancy to make the IPs work.

I-Fuse™: Reliability

I-fuse™ IP has been qualified by JEDEC JESD22-A108 (HTOL at 125oC for 1,000 hours) and JESD22-A103G (HTS at 300oC for 1,000 hours) in various foundries. Passing HTS at 300oC for 1,000 hours is unprecedented for any OTP technologies. The cell current variations are further measured for comparison before and after 1,000hr HTOL and HTS. The current changes are less than 2% as shown in Fig. 4(a) and 4(b). Specifically, I-fuse™ can pass 8 hours at 400°C with 0 defect in 3Mb, while a foundry e-fuse can not even pass 400°C for 2 hours with 20-30 defects in 1Mb. Redistribution Layer (RDL) applications require a die sustaining 2 hours at 400°C for interposer in 3D ICs.

Fig. 4(a) Cell current variations of 1Mb I-fuse™ at 0.18µm CMOS before and after 1,000hr HTS

Fig. 4(b) Cell current variations of 1Mb I-fuse™ at 55nmLP CMOS before and after 1,000hr HTOL

A study was published in 2005 [4] discussing after burn-in behaviors of silicided polysilicon fuses under typical, under-programming, and over-programming that result in after burn-in resistance staying the same, increasing, or decreasing, respectively. The I-fuse™ behavior likes a typical programming so that the fuse resistance stays almost the same. However, the conventional e-fuse tends to have its resistance reduced after burn-in, which shows over-programming behavior. Resistance reduced after burn-in makes sensing window smaller that can cause the IP to fail.

Conclusion

I-fuse™ is a dream OTP comes true that combines the best of all OTP technologies has to offer: high yield, high reliability, high speed, high data security, high scalability, small size, easy-of-use, standard I/O voltages for programming, and wide temperature from -50°C to 200°C. I-fuse™ is also a universal OTP that has been proven from 0.5µm to 28/20/16nm in various CMOS derivatives, variations, half-nodes, and foundries.

Reference:

[1] G. Uhlmann, et al, IEEE ISSCC, Feb., 2008, pp 406-407.

[2] N. Klein, IEEE Trans. Elec. Dev., Vol. 13, No. 11, Nov., 1966, pp. 788.

What is One Time Programmable Memory?

One Time Programmable (OTP) memory is non-volatile, meaning it retains its data when powered off. It is a special type of read-only memory that can only be programmed or written to once. Once this memory has been programmed or written, it cannot be rewritten again without special equipment and procedures.

Programming OTP memory requires specialized equipment because the memory needs to be exposed to ultraviolet light for a precise amount of time and intensity or other similar conditions. These conditions are not something that could normally happen by accident and require extremely specific conditions in order to program the memory.

This small guide will introduce readers to what One Time Programmable (OTP) memory is, how it’s used and some examples of where you might find OTP memory in your everyday life.

What is OTP Memory?

Just like any other type of memory, OTP memory is a semiconductor device used to store data. It is a special type of read-only memory that can only be programmed or written once. Once this memory has been programmed or written, it cannot be rewritten again without special equipment and procedures.

Unlike normal read-only memory that is programmed only once and is then used for static storage, OTP memory is intended for use in situations where the data must remain unchangeable. OTP memory is used in situations where the data could be harmful if it could be changed or tampered with.

How is One Time Programmable Memory Used?

OTP memory is used in a variety of different electronic systems and devices to store important information that needs to be unchangeable. One of the most common uses of OTP memory is in computer systems where OTP memory is used to store the BIOS or Basic Input/Output System code. This is the code that starts up the system and controls the hardware. Most computer systems use OTP memory to store the BIOS code because it needs to be unchangeable and cannot be altered or tampered with. If someone was able to modify the code in the BIOS, they could potentially gain control of the computer and potentially even damage the computer. OTP memory is also commonly used in other computer systems including data processing systems, communication systems and industrial control systems.

Applications of OTP Memory

OTP memory is commonly used in industrial settings for things like controlling machines and systems used for manufacturing.
It is also commonly used in medical equipment and systems as a way to ensure the data is not tampered with and cannot be changed.
OTP memory is also commonly used in everyday devices such as smartphones, tablets and laptops.
OTP memory is often used to store the device’s WiFi or wireless network key. This is sometimes referred to as the WiFi password or passcode. This is the code that is used to connect the device to a wireless network.
OTP memory is also commonly used in other devices such as smart watches, medical devices and sensors to store important information such as medical histories and patient information.

Benefits of OTP Memory

OTP memory is a robust and resilient memory type that is extremely reliable and tamper-proof. This memory type can be used in a wide range of different applications and systems. It is extremely useful in situations where the data needs to be unchangeable. OTP memory is commonly used in computer systems to store BIOS code and other important information. It can be used in other systems as well such as medical devices and sensors. There are many different types of OTP memory available and the specific type used is dependent on the system it’s being used in.

Limitations of OTP Memory

One of the main limitations of OTP memory is that it can only be programmed under very specific conditions. To program the memory, it needs to be exposed to ultraviolet light for a precise amount of time and intensity or other similar conditions. These conditions are not something that could normally happen by accident and require extremely specific conditions to program the memory. OTP memory is extremely useful in many different systems and devices. However, it cannot be reprogrammed, so any changes that are needed need to be done with a new device. Once the memory has been programmed once, it cannot be reprogrammed again.

Conclusion

OTP memory is commonly used in computer systems to store BIOS code and other important information. It can be used in other systems as well such as medical devices and sensors.

There are many different types of OTP memory available and the specific type used is dependent on the system it’s being used in.